Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.
The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of the PS samples, however, the freshly prepared sample showed an unusually large and sudden increase in its emission intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increased. The O-H vibrations of the silicon wafer also showed a sudden decrease at the same temperature. These results are consistent with the assumption that the luminescence of fresh PS comes from the carrier bound exciton in its confined nanostructure.
ZOU Bing-suoWU Zhen yuCAO LiDAI Jian-huaXIE Si-shenWANG Jian pingMostafa AEl-Sayed
A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical wpour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm, which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.
This paper studies power dependent photoluminescence spectra, the stimulated emission occurring at ultraviolet (UV) band instead of the green emission band of ZnO nanowires, which are prepared with a chemical reduction method. The dynamics of the UV emission and green emission is given to demonstrate the reason of stimulated emission occurring at UV band but not the green emission band under high excitation, which indicates that the slow decay rate of trap state makes it easy to be fully filled and saturated, while the fast decay rate of near-band-edge exciton state makes the UV emission dominate the radiative recombination under high excitation. The UV emission, as well as the corresponding stimulated emission, occurs in competition with the green deep-trap emission. In addition, when pump fluence further increases, the multiple lasing modes appear. The dependence of these lasing modes on the pump fluence is first discussed. This diagram should be helpful to understand and design the optical nanodevices of ZnO nanowires.