调频范围是压控振荡器的一个重要的性能指标,当调频范围增大时,振荡器的振幅会随着频率的不同而改变。为了保证压控振荡器在调频范围内振幅恒定,提出了一种新型的自动振幅控制的电路结构。自动振幅控制电路由峰值检测、比较器和低通滤波器几部分构成,自动振幅控制电路与压控振荡器组成的反馈环路控制压控振荡器的输出恒定。电路采用标准的0.35μm CM O S工艺流片并进行测试。测试结果表明:压控振荡器的调频范围为18.2MH z^24.3MH z,达到了28.7%,自动振幅控制电路保证压控振荡器的振幅变化仅为8.7%。
An automatic IQ phase calibration method implemented in a 2.4GHz direct conversion receiver is proposed. It uses a delay locked loop （DLL） with a proposed quadrature phase detector to greatly reduce the phase error. The receiver is fabricated in a 0.18μm CMOS process. Measurements show that the IQ phase error can be calibrated within 1°,which satisfies the system requirement.
A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon,avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation,it can reach a temperature coefficient of 23ppm/℃ from 30 to 150℃ with a line regulation of 2. 1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference （without pad） is 0. 088mm^2.
A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.
