Indium tin oxide (ITO) films were fabricated on polyethylene terephthalate (PET) substrate at room tem- perature using dc magnetron sputtering technique with different sputtering powers. The structural, electrical and optical properties were investigated by X-ray diffraction (XRD), Hall effect, reflection and transmission, respectively. XRD patterns show gradual enhancement of crystalline quality with increasing sputtering power. Significant improvement of Hall mobility due to the reduction of defects was observed though the carrier density varied slightly. Simultaneously, the mean transmission in visible light range decreased severely with increasing sputtering power. Slight move toward shorter-wavelength side of absorption peak was due to the variation of plasma wavelength. The reflection increase of near-infrared light originated from the decrease of resistivity. Finally, band gap was obtained using Tauc s relation and it was consistent with Burstein-Moss shift.
C-axis oriented Ga-doped ZnO(GZO) films with various thicknesses were deposited on glass substrate by radio frequency(RF) magnetron sputtering. The dependence of crystal structure,electrical,and optical properties of the GZO films on crystalline size were systematically studied. The results showed that the texture coefficient of (002) peak (TC(002)) decreases with increasing crystalline size. The Hall mobility m was reciprocal to electron effective mass and the fitted relaxation time s was 0.11±0.01 ms. With the increase of average crystalline size,the resistivity increased slightly,which is caused by the competition of (002) and(101) plane,introducing in some defects and leading to carrier density reduction. The optical band gap was in the range from 3.454 to 3.319 eV with increasing crystalline size from 26.96 to 30.88 nm,showing a negative relationship. The dependence of optical band gap (Eopg) on the crystalline size(R) can be qualitatively explained by a quantum confinement effect. The relationship between Eopg and R of GZO films suggests that tuning up optical properties for desired applications can be achieved by controlling the crystalline size.
Indium-tin-oxide(ITO)films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature.The film structure,thickness,electrical and optical properties are investigated through XRD,SEM,van der Pauw method and FTIR,respectively.The XRD results indicate that all the films are amorphous structure.With the increase of sputtering time,resistivity and transmittance decrease simultaneously.However the absorption gets stronger,especially in near-infrared light region.Through Drude model the plasma frequency is calculated and the calculation result is pretty consistent with films deposited at 60 and 90 min.
