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国家自然科学基金(60676032)

作品数:9 被引量:10H指数:2
相关作者:于彤军张国义康香宁陈志忠包魁更多>>
相关机构:北京大学四川大学更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>
相关领域:电子电信理学化学工程更多>>

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9 条 记 录,以下是 1-10
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Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy被引量:2
2011年
Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy (HVPE), and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2[) growth modes in metal-organic chemical vapour deposition (MOCVD), provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation metbod (GVM), developed based on the two strain states, is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.
杜彦浩吴洁君罗伟科John Goldsmith韩彤陶岳彬杨志坚于彤军张国义
关键词:GANHETEROEPITAXY
Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction
2010年
Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching.The dodecagonal pyramid shows twelve facets including six{20-2-3}and six{22-4-5}planes.From cross-sectional TEM image,it is shown that the pyramid corresponds to the top of the edge dislocation.Compared with hexagonal pyramid-surface light emitting diodes(LEDs)etched by commonly used photoelectrochemical(PEC)process in KOH aqueous,the dodecagonal pyramid-surface LEDs show improved light extraction efficiency because of more facets,which effectively reduces the total internal reflection.
QI ShengLi,CHEN ZhiZhong,SUN YongJian,FANG Hao,TAO YueBin,SANG LiWen,TIAN PengFei,DENG JunJing,ZHAO LuBing,YU TongJun,QIN ZhiXin&ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China
关键词:GANFACEWETETCHINGH3PO4PYRAMID
采用AlGaN/GaN阻挡层的大功率InGaN/GaN MQWs蓝光LED
大功率InGaN/GaN多量子阱蓝光发光二极管在大注入电流下,载流子泄漏而引起的效率下降问题是目前限制大功率发光二极管光电特性及其应用的突出问题。本文通过在p型GaN和InGaN/GaN多量子阱(MQW)有源区之间插入p...
齐胜利陈志忠潘尧波郝茂盛邓俊静田朋飞张国义颜建锋朱广敏陈诚李士涛
关键词:氮化镓外量子效率
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激光剥离转移衬底的薄膜GaN基LED器件特性分析
制备了基于蓝宝石衬底的GaN基LED(C-LED)以及由激光剥离技术(LLO)制作的基于Cu衬底的相同电学结构的薄膜GaN基LED(LLO-LED)。通过研究发现,经过激光剥离过程后,器件的反向漏电流明显增加,其等效并联...
孙永健陈志忠齐胜利于彤军康香宁刘鹏张国义朱广敏潘尧波陈诚李仕涛颜建峰郝茂盛
关键词:氮化镓发光二极管激光剥离漏电流
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Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
2011年
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V· s) and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.
方浩龙浩桑立雯齐胜利熊畅于彤军杨志坚张国义
关键词:III-NITRIDESNONPOLAR
GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究被引量:1
2008年
利用红外反射光谱研究了蓝宝石衬底上用金属有机物化学气相淀积方法生长的稀磁半导体GaMnN材料的晶格振动特性.并成功地将改进的遗传算法应用于其红外反射光谱洛伦兹振子模型参数的提取.通过与GaN薄膜的洛伦兹振子模型参数的对比研究发现,GaN掺入Mn后,ωTO向高频方向移动,γ,ε∞和εs均增加,而ωLO基本保持不变.文中同时分析和讨论了Mn对晶格振动特性的影响及介电函数变化的机理.
程兴华唐龙谷陈志涛龚敏于彤军张国义石瑞英
关键词:遗传算法
InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响
2006年
对蓝宝石衬底上的InGaN/GaN和InGaN/AlGaN多量子阱结构和经激光剥离去除衬底的InGaN/GaN和InGaN/AlGaN多量子阱结构薄膜样品,进行了光致发光谱、高分辨XRD和喇曼光谱测量.PL测量结果表明,相对于带有蓝宝石衬底的样品,InGaN/GaN多量子阱薄膜样品的PL谱峰值波长发生较小的蓝移,而InGaN/AlGaN多量子阱薄膜样品的PL谱峰值波长发生明显的红移;喇曼光谱的结果表明,激光剥离前后E2模的峰值从569.1减少到567.5cm-1.这说明激光剥离去除衬底使得外延层整体的压应力得到部分释放,但InGaN/GaN与InGaN/AlGaN多量子阱结构中阱层InGaN的应力发生了不同的变化.XRD的结果证实了这一结论.
于彤军
关键词:光致发光谱INGANALGAN多量子阱
垂直电极结构GaN基发光二极管的研制被引量:4
2007年
利用激光剥离技术(LLO)和晶片键合技术将GaN基发光二极管(LED)薄膜与蓝宝石衬底分离并转移到Si衬底上,高分辨X射线衍射(HRXRD)和阴极荧光谱(CL)结果表明激光剥离过程没有影响GaN量子阱的结构和光学性质,GaN和InGaN/GaN多量子阱的发光峰都呈现红移,这都来源于去除蓝宝石后薄膜中应力的释放.采用金属In和Pd的合金化键合过程解决了GaN材料与Si衬底的结合问题,结合逐个芯片剥离和键合的方式实现了GaN大面积均匀转移.成功研制了激光剥离垂直电极结构的GaN基LED,L-I测试特性表明器件的热饱和电流和出光功率都有很大的提高.
康香宁包魁陈志忠徐科章蓓于彤军聂瑞娟张国义
关键词:GANLED激光剥离垂直电极
Analysis of junction temperatures in high-power GaN-based LEDs被引量:3
2010年
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.
JIANG YuXuan1, LI Zheng1, SUN YongJian1, YU TongJun1, CHEN ZhiZhong1, ZHANG GuoYi1, ZHANG GuangChen2 & FENG ShiWei2 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
关键词:JUNCTIONBONDINGMEDIUMFEMEFFECTIVE
Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes
2010年
Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by the measurement of electron back scattering diffraction (EBSD), and the characteristics of VSLED were analyzed by scanning acoustic microscope (SAM), Raman scattering, current-voltage (I-V) and light output-current (L-I) curves. After the bonding process, horizontal stripes of Au/Sn phase (δ phase) and Au5Sn phase (ζ phase) were redirected to vertical stripes, and δ phase tended to move to the solder joint. Sn interstitial diffusion led to the distribution of δ phase and voids in Au/Sn solder, which could be seen in SAM and SEM images. Vertical distribution of the δ phase and ζ phase with proper voids in the Au/Sn bonding layer showed the best bonding quality. Good bonding quality led to little shift of the E2-high mode of Raman spectra peak in GaN after laser lift off (LLO). It also caused more light extraction and forward bias reduction to 2.9 V at 20 mA.
TIAN PengFei, SUN YongJian, CHEN ZhiZhong, QI ShengLi, DENG JunJing, YU TongJun, QIN ZhiXin & ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
关键词:BONDINGPHASE
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