In this work, we report an enhanced nitrogen dioxide（NO_2） gas sensor based on tungsten oxide（WO_3）nanowires/porous silicon（PS） decorated with gold（Au） nanoparticles. Au-loaded WO_3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy（HRTEM） micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO_3 nanowires. The effect of the Au nanoparticles on the NO_2-sensing performance of WO_3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO_2 at room temperature（25℃）. It is found that the 10-？ Au-loaded WO_3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO_3 nanowires/porous silicon is also discussed.
Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.
Hexagonal WO_3 nanorods were synthesized through a facile hydrothermal method. The nanorods properties were investigated by scanning electron microscope（SEM）, transmission electron microscope（TEM）, energy dispersive spectroscopy（EDS）, and x-ray diffraction（XRD）. The NO_2-sensing performances in terms of sensor response, response/recovery times and repeatability at room temperature were optimized by varying the heat treatment temperature of WO_3 nanorods. The optimized NO_2sensor（400-℃-annealed WO_3 nanorods） showed an ultra-high sensor response of 3.2 and short response time of 1 s to 5-ppm NO_2. In addition, the 400-℃-annealed sample exhibited more stable repeatability.Furthermore, dynamic responses measurements of annealed samples showed that all the annealed WO_3 nanorods sensors presented p-type behaviors. We suppose the p-type behavior of the WO_3 nanorods sensor to be that an inversion layer is formed in the space charge layer when the sensor is exposed to NO_2 at room temperature.Therefore, the 400-℃-annealed WO_3 nanorods sensor is one of the most energy conservation candidates to detect NO_2 at room temperature.
Ultrathin VO_2 nanobelts with rough alignment features are prepared on the induction layer-coated substrates by an ethylenediaminetetraacetic acid（EDTA）-mediated hydrothermal process. EDTA acts as a chelating reagent and capping agent to facilitate the one-dimensional（1D） preferential growth of ultrathin VO_2 nanobelts with high crystallinities and good uniformities. The annealed induction layer and concentration of EDTA are found to play crucial roles in the formation of aligned and ultrathin nanobelts. Variation in EDTA concentration can change the VO_2 morphology of ultrathin nanobelts into that of thick nanoplates. Mild annealing of ultrathin VO_2 nanobelts at 350℃ in air results in the formation of V_2O_5 nanobelts with a nearly unchanged ultrathin structure. The nucleation and growth mechanism involved in the formations of nanobelts and nanoplates are proposed. The ethanol gas sensing properties of the V_2O_5 nanobelt networks-based sensor are investigated in a temperature range from 100℃ to 300℃ over ethanol concentrations ranging from 3 ppm to 500 ppm.The results indicate that the V_2O_5 nanobelt network sensor exhibits high sensitivity, good reversibility, and fast responserecovery characteristics with an optimal working temperature of 250℃.
A novel three-dimensional（3D） hierarchical structure and a roughly oriented one-dimensional（1D） nanowire of WO3 are selectively prepared on an alumina substrate by an induced hydrothermal growth method.Each hierarchical structure is constructed hydrothermally through bilateral inductive growth of WO3 nanowire arrays from a nanosheet preformed on the substrate.Only roughly oriented 1D WO3 nanowire can be obtained from a spherical induction layer.The analyses show that as-prepared 1D nanowire and 3D hierarchical structures exhibit monoclinic and hexagonal phases of WO3,respectively.The gas-sensing properties of the nanowires and the hierarchical structure of WO_3,which include the variations of their resistances and response times when exposed to NO2,are investigated at temperatures ranging from room temperature（20 ℃） to 250 ℃ over 0.015 ppm-5 ppm NO2.The hierarchical WO3 behaves as a p-type semiconductor at room temperature,and shows p-to-n response characteristic reversal with the increase of temperature.Meanwhile,unlike the1 D nanowire,the hierarchical WO3 exhibits an excellent response characteristic and very good reversibility and selectivity to NO2 gas at room temperature due to its unique microstructure.Especially,it is found that the hierarchical VO3-based sensor is capable of detecting NO2 at a ppb level with ultrashort response time shorter than 5 s,indicating the potential of this material in developing a highly sensitive gas sensor with a low power consumption.
