In order to obtain high quality NiO thin film grown with the radio-frequency magnetron sputtering method, the influence of O/Ar ratio on the structure, band-gap, resistivity and optical transmittance of NiO thin films were studied. It was found that the obtained NiO thin film showed （111） preferred orientation and higher transparency in the visible region. With the increasing of O/ Ar ratio from 1：7 to 8： 2, the optical transmittance of NiO thin films decreased and the optical band- gap was between 3. 4 eV and 3. 7 eV, and the sheet resistivity decreased from 5. 4 ~ 107 Ω/ to 1.0 × 10^5 Ω/[]. Our study shows that the properties of NiO thin films can be adjusted in a wide range by adjusting the O/At ratio in the sputtering process.
NiO作为一种新型的宽禁带半导体材料,在紫外光探测器、发光二极管等领域具有重要应用。采用Material studio软件在建立NiO晶体结构模型的基础上,通过软件模拟得到了NiO薄膜的能带、结构和光学等特性。发现模拟得到的NiO能带是一种直接带隙的半导体,其禁带宽度为3.1 e V,分别在37.2°、43.3°、62.9°、75.4°和79.5°出现了x射线衍射峰,NiO薄膜材料在可见光区吸收很少,而在紫外波段吸收特性较好。还采用磁控溅射方法,在石英衬底上制备了NiO薄膜,并对其结构、光学、形貌、原子比例等特性进行了研究。同理论模拟结果对比研究发现,模拟结果和实验结果基本一致,证明了模拟方法的可靠性。
