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国家重点基础研究发展计划(2006CB921106)

作品数:19 被引量:183H指数:7
相关作者:罗毅韩彦军李洪涛钱可元张磊更多>>
相关机构:清华大学勤上光电股份有限公司更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金国家高技术研究发展计划更多>>
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19 条 记 录,以下是 1-10
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Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy
2010年
In this paper,the effects of thickness of AlN nucleation layer grown at high temperature on AlN epi-layer crystalline quality are investigated.Crack-free AlN samples with various nucleation thicknesses are grown on sapphire substrates by plasma-assisted molecular beam epitaxy.The AlN crystalline quality is analysed by transmission electron microscope and x-ray diffraction (XRD) rocking curves in both (002) and (102) planes.The surface profiles of nucleation layer with different thicknesses after in-situ annealing are also analysed by atomic force microscope.A critical nucleation thickness for realising high quality AlN films is found.When the nucleation thickness is above a certain value,the (102) XRD full width at half maximum (FWHM) of AlN bulk increases with nucleation thickness increasing,whereas the (002) XRD FWHM shows an opposite trend.These phenomena can be attributed to the characteristics of nucleation islands and the evolution of crystal grains during AlN main layer growth.
任凡郝智彪胡健楠张辰罗毅
关键词:分子束外延生长氮化铝薄膜晶体质量透射电子显微镜
BCB/InP基宽带低损耗共面波导微波传输线被引量:3
2008年
面向高速行波电吸收(EA)调制器的需要,设计并制作了基于苯并环丁烯(BCB)聚合物/InP衬底的宽带(0~40GHz)、低损耗微波共面波导传输线。对共面波导结构开展仿真设计,分别对BCB材料厚度、InP衬底导电率和信号电极宽度等关键参数进行了优化。结果表明,当设计的BCB膜厚为4μm、InP衬底导电率小于0.002(Ω·cm)^-1和信号线宽度为84μm时,微波传输性能可达最优。在此基础上,采用电阻率为10^8μΩ·cm的半绝缘(SI)InP衬底、涂覆4μmBCB薄膜,制作出0~40GHz范围内微波损耗小于0.5dB/mm的共面波导传输线。
侯海燕熊兵徐建明周奇伟孙长征罗毅
关键词:共面波导苯并环丁烯
柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响被引量:7
2009年
在柱状图形蓝宝石衬底(PSS-p)和孔状图形蓝宝石衬底(PSS-h)上外延了GaN体材料和LED结构并进行了详细对比和分析.X射线衍射仪(XRD)和原子力显微镜(AFM)测试结果表明,PSS-h上体材料的晶体质量和表面形貌都优于PSS-p上体材料的特性,通过断面扫面电子显微镜(SEM)照片看出PSS-h上GaN的侧向生长是导致这种差异的原因.另外,基于PSS-p和PSS-h上外延的LED材料制作而成的器件结果表明,其20mA下光功率水平相比普通蓝宝石衬底(CSS)分别提高了46%和33%.通过变温光荧光谱(PL)分析发现,样品的内量子效率十分接近.因此,可以推断PSS-h上侧向外延中存留的空气隙则会影响光提取效率的提高.
江洋罗毅汪莱李洪涛席光义赵维韩彦军
关键词:蓝宝石图形衬底氮化镓
电流驱动磁化翻转中的热效应被引量:1
2009年
从理论上研究了电流驱动磁开关中的热效应,在Neel-Brown弛豫时间理论和Li等的有效温度的工作基础上作了改进.在对称系综模型的Landau-Lifshitz-Gilbert和Fokker-Planck方程的基础上,分析了电流驱动磁动力学开关过程和电流引起磁势能的变化,提出一个新的电流感应磁势垒降低模型.新模型是非线性的,与Li等的有效温度模型不同.在此模型的基础上,讨论了开关临界电流对温度、开关时间的依赖关系,理论与实验相符合.对电流引起的样品温升的实验曲线进行了修正,实验结果与文中的非线性势垒降低模型一致.此外由实验确定了磁开关的本征开关电流Ic0、尝试时间τ0和本征势垒Eb0.
董浩任敏张磊邓宁陈培毅
关键词:热效应FOKKER-PLANCK方程
AlGaN表面坑状缺陷及GaN缓冲层位错缺陷对AlGaN/GaN HEMT电流崩塌效应的影响被引量:3
2008年
利用金属有机气相外延(MOVPE)技术生长了具有不同AlGaN表面坑状缺陷和GaN缓冲层位错缺陷密度的AlGaN/GaN高电子迁移率晶体管(HEMT)样品,并对比研究了两种缺陷对器件栅、漏延迟电流崩塌效应的影响.栅延迟测试表明,AlGaN表面坑状缺陷会引起栅延迟电流崩塌效应和源漏电阻的增加,而且表面坑状缺陷越多,栅延迟电流崩塌程度和源漏电阻的增加越明显.漏延迟测试显示,AlGaN表面坑状缺陷对漏延迟电流崩塌影响不大,而GaN缓冲层位错缺陷主要影响漏延迟电流崩塌.研究结果表明,AlGaN表面坑状缺陷和GaN缓冲层位错缺陷分别是引起AlGaN/GaN HEMT栅、漏延迟电流崩塌的电子陷阱来源之一.
席光义任凡郝智彪汪莱李洪涛江洋赵维韩彦军罗毅
关键词:ALGAN/GAN电流崩塌
Two mode photon bunching effect as witness of quantum criticality in circuit QED被引量:6
2009年
We suggest a scheme to probe critical phenomena at a quantum phase transition (QPT) using the quantum correlation of two photonic modes simultaneously coupled to a critical system. As an experimentally accessible physical implementation,a circuit QED system is formed by a capacitively coupled Josephson junction qubit array interacting with one superconducting transmission line resonator (TLR). It realizes an Ising chain in the transverse field (ICTF) which interacts with the two magnetic modes propagating in the TLR. We demonstrate that in the vicinity of criticality the originally independent fields tend to display photon bunching effects due to their interaction with the ICTF. Thus,the occurrence of the QPT is reflected by the quantum characteristics of the photonic fields.
AI Qing1,WANG YingDan2,LONG GuiLu1,3 & SUN ChangPu4 1 Department of Physics,Tsinghua University,Beijing 100084,China
关键词:TRANSITIONPHOTONBUNCHINGCIRCUITQED
An N/4 fixed-point duality quantum search algorithm被引量:8
2010年
Here a fixed-point duality quantum search algorithm is proposed.This algorithm uses iteratively non-unitary operations and measurements to search an unsorted database.Once the marked item is found,the algorithm stops automatically.This algorithm uses a constant non-unitary operator,and requires N/4 steps on average(N is the number of data from the database) to locate the marked state.The implementation of this algorithm in a usual quantum computer is also demonstrated.
HAO Liang1,LIU Dan2 & LONG GuiLu1,3 1Key Laboratory for Atomic and Molecular NanoSciences and Department of Physics,Tsinghua University,Beijing 100084,China
关键词:FIXED-POINTSEARCHALGORITHMDUALITYCOMPUTINGN4DUALITYSEARCHALGORITHM
Effects of SiN_x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors被引量:1
2010年
SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.
任凡郝智彪王磊汪莱李洪涛罗毅
关键词:电流崩塌等离子体增强化学气相沉积HEMT器件ALGAN
Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells被引量:1
2010年
Blue In0.2 Ga0.8N multiple quantum wells (MQWs) with Inx Ga1xN (x=0.01 0.04) barriers are grown by metal organic vapour phase epitaxy.The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra.Furthermore,a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs).It is found that by adopting the InGaN barrier beneath the lowest well,it is possible to reduce the strain hence the NRCs in InGaN MQWs.By optimizing the thickness and the indium content of the InGaN barriers,the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs.On the other hand,the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously.In addition,the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.
汪莱王嘉星赵维邹翔罗毅
关键词:氮化铟镓量子效率多量子阱
Eavesdropping in a quantum secret sharing protocol based on Grover algorithm and its solution被引量:20
2010年
A detailed analysis has showed that the quantum secret sharing protocol based on the Grover algorithm (Phys Rev A, 2003, 68: 022306) is insecure. A dishonest receiver may obtain the full information without being detected. A quantum secret-sharing protocol is presents here, which mends the security loophole of the original secret-sharing protocol, and doubles the information capacity.
HAO Liang1, LI JunLin1 & LONG GuiLu1,2 1Key Laboratory for Atomic and Molecular NanoSciences and Department of Physics, Tsinghua University, Beijing 100084, China
关键词:QUANTUMSECRETALGORITHMQUANTUMCRYPTOGRAPHYQUANTUMALGORITHM
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