The optical transmission（200--2000 nm）, sheet resistance and work functions of indium-tin oxide（ITO）（100 Ω/）, ITO（12 Ω/）, zinc-oxide（ZnO）, aluminum-doped ZnO（AZO） and polyaniline（PANI） films were investigated. Near-infrared organic light-emitting diodes（NIR-OLEDs） emitting around 1.54 μm based on Er（DBM）3Phen with ITO（100 Ω/）, ITO（12 Ω/） and PANI as anodes, respectively, were fabricated. The device structure was anode/4＂-tris（N-3-methylphenyl-N-phenyl-amino）-triphenylamine（m-MTDATA）/ N,N＇-di-l-naphthyl- N,N＇-diphenylbenzidine（NPB）/Er（DBM）3Phen/tris-（8-hydroxyquinoline） aluminum（Alq3）/A1. The results suggest that the performance of NIR-OLEDs with ITO（100 Ω/）, which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO（12 Ω/） and PANI as anodes, respectively. The high N1R transmittance of ITO（100 Ω/） is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO（100 Ω/） are another reasons.
