Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a ＇vacancy-ion complex＇ as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter--grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.
This paper presents an embeddable SOC real-time prediction circuit and method for TDDB.When the SOC under test is fails due to TDDB,the prediction circuit is capable of issuing a warning signal.The prediction circuit,designed by using a standard CMOS process,occupies a small silicon area and does not share any signal with the circuits under test,therefore,the possibility of interference with the surrounding circuits is safely excluded.
