Thermally grown amorphous SiO 2 (a-SiO 2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0×10 17 ions/cm 2.These samples were irradiated at RT with 853 MeV Pb-ions to 1.0×10 12 and 5.0×10 12 ions/cm 2.Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT.Significant microstructure modifications were observed in C-doped a-SiO 2/Si samples after high energy Pb-ion irradiations,and the formation of new structures depended strongly on the Pb-ion irradiation fluences.For example,tracks in high density were observed in a 1.0×10 12 Pb/cm 2 irradiated and C-doped sample.Additionally,the length of tracks grows,and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0×10 12 Pb/cm 2.Possible modification processes of C-doped a-SiO 2 under swift heavy ion irradiations are briefly discussed.
LIU ChunBaoWEI KongFangYAO CunFengWANG ZhiGuangJIN YunFanTOULEMONDE M
<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.
Wang ZhiguangZhao ZhimingA. BenyagoubM. ToulemondeSong YinLiu ChunbaoZang HangWei KongfangJin Yunfan
Crystalline SiO2 (c-SiO2) samples were implanted at room temperature (RT) with 120 keV C-ions and the selected implantation doses were 2.0×1017, 5.0×1017, 8. 6×1017 and 1. 2×1017 C/cm2. These samples were annealed in vacuum under 500, 700, 900 and 1 100℃, respectively. The modification of the samples was investigated at RT by using a Spectrum GX IR spectroscopy.
Wang Zhiguang, Zhao Zhiming, Song Yin, Liu Chunbao, Zang Hang, Wei Kongfang and Jin Yunfan
