Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Ω·cm is obtained when the sample is treated at 1200℃ for 2 h with the surface concentration of the copper dopant source being 1.83×10^7mol/cm^2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010–4130 K.
