The dual-frequency capacitively coupled plasma （DF-CCP） with inductive enhancement system is a newly designed plasma reactor. Different from the conventional inductively coupled plasma （ICP） reactors, now a radio frequency （rf） power is connected to an antenna placed outside the chamber with a one-turn bare coil placed between two electrodes in DF-CCP. This paper gives a detailed description of its structure of discharges in this apparatus were made via a Moreover, investigations on some characteristics Langmuir probe.
BAI YangJIN ChenggangYU TaoWU XuemeiZHUGE LanjianNING ZhaoyuanYE ChaoGE Shuibing
A new technique of the synthesis of Nanocrystalline Diamond(NCD)Films by helicon wave plasma(HWP)chemical vapor deposition at room temperature was reported.The growth morphology and the roughness of NCD samples was characterized using filed emission scanning electron microscopy(SEM-SU8010)and atom force microscopy(AFM),respectively.The results show the growth rate of the film was very fast,about 833nm/min.Typical G,D
Jun YuTianyuan HuangPeiyu JiChenggang JinLanjian ZhugeXuemei Wu
Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.
