The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods （NRs） grown by low-temperature aqueous chemical growth method and a p-type polyfluorene （PF） organic film fabricated by spin-coating. The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer. The thickness of the PF layer plays a dominant role for the current-voltage （I-V） characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device, and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness. The photoluminescence （PL） spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene （PF） structure, which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission.
The optical transmission（200--2000 nm）, sheet resistance and work functions of indium-tin oxide（ITO）（100 Ω/）, ITO（12 Ω/）, zinc-oxide（ZnO）, aluminum-doped ZnO（AZO） and polyaniline（PANI） films were investigated. Near-infrared organic light-emitting diodes（NIR-OLEDs） emitting around 1.54 μm based on Er（DBM）3Phen with ITO（100 Ω/）, ITO（12 Ω/） and PANI as anodes, respectively, were fabricated. The device structure was anode/4＂-tris（N-3-methylphenyl-N-phenyl-amino）-triphenylamine（m-MTDATA）/ N,N＇-di-l-naphthyl- N,N＇-diphenylbenzidine（NPB）/Er（DBM）3Phen/tris-（8-hydroxyquinoline） aluminum（Alq3）/A1. The results suggest that the performance of NIR-OLEDs with ITO（100 Ω/）, which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO（12 Ω/） and PANI as anodes, respectively. The high N1R transmittance of ITO（100 Ω/） is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO（100 Ω/） are another reasons.
