The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.
In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs （gate length 2 μm） with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/（V·s）.
To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V.s are demonstrated on a Ge （111） substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor （MOS） interface by analyzing the electrical characteristics of HCl- and （NH4）2S-passivated samples.
A method of suppressing the multimodal size distribution of InAs/GaAs quantum dots(QDs) using molecular beam epitaxy through flattening the substrate surface is reported in this work.It is found that the surface roughness plays an important role in the growth of QDs through continuous surface evolution(SEQDs).SEQDs are the main components of small QD ensemble in QDs with multimodal size distribution.It is suggested that most of the SEQDs are very likely to nucleate during the growth interruption rather than during the deposition.The growth of QDs on a smoother surface has largely reduced the density of SEQDs.The photoluminescence line width of uniform QDs is found to be only 17 meV at a low temperature.
WANG Lu1,2,LI MeiCheng1,WANG WenXin2,GAO HanChao2,TIAN HaiTao2,XIONG Min1 & ZHAO LianCheng1 1 School of Material Science and Technology,Harbin Institute of Technology,Harbin 150001,China
