We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.
As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.
LIU XinJI ZhuoYuLIU MingSHANG LiWeiLI DongMeiDAI YueHua
