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国家自然科学基金(91221302)

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发文基金:国家自然科学基金国家重点基础研究发展计划更多>>
相关领域:化学工程电子电信理学更多>>

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In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness被引量:3
2013年
Topological insulators (TIs) are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV)-MBE-Raman spectroscopy system. When the thickness of Bi2Te3 films decreases from 40 quintuple-layers (QL) to 1 QL, the spectral characteristics of some Raman modes appearing in bulk Bi2Te3 vary and a new vibrational mode appears, which has not been reported in previous studies and might be related to quantum size effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs.
Chunxiao WangXiegang ZhuLouis NilssonJing WenGuangWangXinyan ShanQing ZhangShulin ZhangJinfeng JiaQikun Xue
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