6H-SiC single crystals were grown by sublimation method. It is found that foreign grains occur frequently on the facets of the crystals. To characterize the foreign grain, a longitudinal and a sectional cut samples were prepared by standard mechanical processing method. Raman spectrum confirms that the foreign grain is actually a mis-oriented 6H-SiC grain. The surface structure of the foreign grain was studied by chemical etching and optical microscopy. It is shown that etch pits in foreign grain region take the shape of isosceles triangle, which are different from those in mono-crystalline region, and high density stacking faults are observed on the surface of the foreign grain. The orientation of foreign grain surface is determined to be （10]-4） plane by back-scattering X-ray Laue image. The X-ray powder diffraction reveals that the powder is partly graphitized after a long crystal growth rim. Therefore it is believed that the loss of Si results in the formation of C inclusions, which is responsible for the nucleation of foreign grain in the facet region.
