AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes （DBRTDs） grown on a semi-insulated GaAs substrate with molecular beam epitaxy is demonstrated. By sandwiching the In0.1 Ga0.9 As layer between GaAs layers, potential wells beside the two sides of barrier are deepened, resulting in an increase of the peak-to-valley current ratio （PVCR） and a peak current density. A special shape of collector is designed in order to reduce contact resistance and non-uniformity of the current;as a result the total chrrent density in the device is increased. The use of thin barriers is also helpful for the improvement of the PVCR and the peak current density in DBRTDs. The devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm^2 at room temperature.
