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Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures
2017年
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
陈玉林李铭领吴一鸣李思嘉林岳杜冬雪丁怀义潘楠王晓平
界面插入层对二次生长ZnO纳米线形貌和光电性能的调控
ZnO纳米线由于具有宽直接带隙(~3.4 eV),大激子结合能(~60 meV),强激子振荡强度(Rabi劈裂能~200 meV),高结晶质量和高度对称的六棱柱形状等优点,被认为是优秀的短波长光电子材料,并且有望能用于制...
吴一鸣
关键词:ZNO纳米线微观形貌光电性能
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