We investigated photoluminescence characteristics of silicone oils treated by C2F6 and CHF3 plasma. The silicone oil treated by the C2F6 plasma emitted a white light mainly composed of 415 nm, 469 nm, and 554 nm emissions, while that treated by the CHF3 plasma emitted a pink light （415 nm）. Fourier transformed infrared spectroscopy and Raman spectroscopy studies showed that the photoluminescence was correlated with the Si-C bond, the carbon-related defects and the oxygen vacancies. It was suggested that the light emitting at 554 nm was related to the Si-C bond and the carbon-related defects, while the pink emission at 415 nm was related to the oxygen vacancies.
The dual-frequency capacitively coupled plasma （DF-CCP） with inductive enhancement system is a newly designed plasma reactor. Different from the conventional inductively coupled plasma （ICP） reactors, now a radio frequency （rf） power is connected to an antenna placed outside the chamber with a one-turn bare coil placed between two electrodes in DF-CCP. This paper gives a detailed description of its structure of discharges in this apparatus were made via a Moreover, investigations on some characteristics Langmuir probe.
BAI YangJIN ChenggangYU TaoWU XuemeiZHUGE LanjianNING ZhaoyuanYE ChaoGE Shuibing
Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.
This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.
The plasma property of a hybrid ICP/sputtering discharge driven by 13.56 MHz/60 MHz power sources was investigated by Langmuir probe measurement. For the pure sputtering discharge, the low electron density and ion flux, the rise of floating potential and plasma potential with increasing power, as well as the bi-Maxwellian distribution of electron en- ergy distributions （EEDFs） were obtained. The assistance of ICP discharge led to the effective increases of electron density and ion flux, the suppression of rise of floating potential and plasma potential, as well as the change of EEDFs from bi-Maxwellian distribution into Maxwellian dis- tribution. The increase of electron density and ion flux, and the EEDFs evolution were related to the effective electron heating by the induced electric field.
